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FMM5804X
17.5-31.5GHz Power Amplifier MMIC
FEATURES
* Output Power: (P1dB): 23.0dBm (Typ.) * High Gain: (G1dB): 18dB (Typ.) * High PAE: add = 18% (Typ.) * Wide Frequency Band: 17.5-31.5 GHz * Impedance Matched Zin/Zout = 50 * 0.25m PHEMT Technology
DESCRIPTION
The FMM5804X is a high-gain, wide band 4-stage MMIC amplifier designed for operation in the 17.5-31.5 GHz frequency range. This amplifier has an input and output designed for use in 50 systems.This device is well suited for point-to-point, point-to-multi-point(LMDS) and satellite communication system applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain Voltage Gate Voltage Input Power Storage Temperature Channel Temperature Operating Backside Temperature Symbol VDD VGG Pin Tstg Tch Top Condition Rating 10 -3.0 16 -65 to +175 175 -40 to +95 Unit V V dBm C C C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 1.0 and -0.08 mA respectively. 3. This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25C)
Item Frequency Range Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Drain Current Power-Added Efficiency Input Return Loss Output Return Loss Symbol f P1dB G1dB Iddrf add RLi RLo VDD = 6V f = 17.5 ~ 31.5 GHz *: at f = 17.5-30.0 GHz **: at f = 30.0-31.5 GHz IDD = 250mA (Typ.) ZS = ZL = 50 Conditions Min. 23* 21** 15 Limits Typ. Max. 17.5-31.5 25* 23** 18 300 18 -15 -8 400 Unit GHz dBm dB mA % dB dB
Note: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
G.C.P.: Gain Compression Point
Edition 1.4 July 1999
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FMM5804X
17.5-31.5GHz Power Amplifier MMIC
P1dB & G1dB vs. VDD
29 27 25 23
P1dB (dBm) IDD = 250mA 18GHz P1dB 18GHz G1dB 31.5GHz P1dB 31.5GHz G1dB
OUTPUT POWER vs. FREQUENCY
VDD = 6V, IDD = 250mA -7dBm 1dBm -5dBm 3dBm -3dBm 7dBm -1dBm P1dB
28 26 24
Output Power (dBm)
21 19 17 15 13 11 9 4 5 6
VDD (V)
22 20 18 16 14 12
22
G1dB (dB)
21 20 19 18 17 7 8
18
20
22
24
26
28
30
32
Frequency (GHz)
ASSEMBLY DRAWING
VGG 0.15F
220pF
FMM5804X
RFin
50 line on Alumina
RFout
50 line on Alumina
220pF
220pF
0.15F VDD VDD
0.15F
BONDING LAYOUT
VGG1 VGG2 VGG3 VGG4
RF in
RFout
VDD1
VDD2
VDD3 VDD4
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FMM5804X
17.5-31.5GHz Power Amplifier MMIC
IMD vs. OUTPUT POWER
V = 6V -15 I DD= 250mA DS -20 f = 10MHz
-25 -30
IMD (dBc)
-35 -40 -45 -50 -55 -60
IM3(18 GHz) IM3(31 GHz) IM5(18 GHz) IM5(31 GHz)
10
15
20
25
Total Output Power (dBm)
S-PARAMETERS VDD = 6V, IDS = 250mA FREQUENCY S11 (MHZ) MAG ANG
1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 17500 18000 18500 19000 19500 20000 20500 21000 21500 22000 22500 23000 23500 24000 24500 25000 25500 26000 26500 27000 27500 28000 28500 29000 29500 30000 30500 31000 31500 32000 33000 34000 35000 36000 37000 38000 39000 40000 .544 .534 .521 .503 .483 .457 .426 .389 .342 .311 .293 .270 .251 .236 .228 .225 .219 .218 .221 .219 .218 .216 .210 .206 .197 .192 .183 .174 .170 .160 .156 .144 .138 .130 .117 .109 .095 .084 .081 .090 .106 .137 .164 .188 .212 .238 .256 .282 .427 .481 .512 .540 .570 .571 .586 168.4 156.9 145.5 133.6 121.2 108.2 94.4 79.3 64.8 51.4 34.4 14.9 -6.2 -29.0 -52.8 -78.1 -102.0 -114.1 -125.2 -138.1 -150.4 -163.1 -176.0 171.0 158.1 145.5 132.5 119.3 106.4 92.6 78.7 62.4 47.9 33.3 15.0 -2.1 -26.6 -55.4 -93.3 -135.7 -170.8 157.3 133.6 117.2 99.5 87.6 73.1 80.6 56.0 36.0 21.3 9.9 -0.5 -10.0 -13.6
S21 MAG
.013 .024 .287 .087 .027 .322 .967 1.700 2.442 2.256 1.637 1.143 1.105 2.536 6.192 9.276 9.251 9.085 9.101 9.162 9.326 9.586 9.729 9.911 9.991 10.021 10.009 9.909 9.829 9.677 9.583 9.322 9.232 9.099 9.128 9.175 9.367 9.679 9.941 10.258 10.465 10.688 10.884 11.095 11.456 12.041 12.909 2.725 .199 .007 .013 .007 .005 .008 .004
S12 ANG
122.1 -13.5 -112.7 74.1 79.7 129.1 39.2 -35.3 -112.0 173.0 119.7 89.2 91.1 79.3 25.5 -51.6 -116.6 -144.1 -169.6 164.9 139.9 114.7 88.9 63.5 37.3 11.7 -13.9 -39.8 -65.4 -91.0 -116.3 -142.3 -167.3 167.5 141.6 116.1 88.6 60.4 30.8 -0.9 -34.0 -68.9 -106.1 -145.8 169.9 119.4 53.4 -120.4 162.5 -171.0 -81.6 -59.0 -116.0 -87.8 -106.4
S22 ANG
-17.1 -106.6 -166.3 -78.4 -104.7 -99.4 -95.9 -90.9 -81.2 -91.2 -95.9 -73.4 -94.4 -84.2 -89.6 -76.7 -74.5 -81.2 -109.0 -76.6 -83.7 -77.6 -88.4 -86.6 -90.2 -97.5 -91.6 -82.0 -79.5 -78.1 -67.6 -66.8 -98.1 -79.5 -70.4 -84.6 -83.4 -67.2 -88.2 -92.7 -70.2 -78.3 -56.4 -58.1 -67.4 -78.4 -80.9 -50.1 -71.8 -70.3 -97.4 -68.7 -65.4 -79.2 -73.7
MAG
.001 .001 .001 .001 .001 .001 .001 .001 .002 .002 .003 .003 .002 .003 .003 .003 .004 .004 .003 .004 .003 .004 .003 .003 .003 .004 .005 .005 .005 .005 .004 .004 .004 .004 .005 .004 .005 .005 .004 .005 .004 .005 .004 .006 .007 .006 .006 .007 .008 .005 .007 .006 .010 .007 .005
MAG
.987 .948 .974 .965 .969 .968 .959 .944 .920 .887 .844 .789 .717 .629 .542 .449 .372 .338 .324 .316 .322 .341 .353 .372 .390 .411 .434 .445 .454 .454 .450 .433 .406 .374 .345 .307 .261 .220 .182 .164 .140 .139 .142 .151 .176 .219 .403 .859 .800 .785 .809 .816 .828 .844 .862
ANG
-50.9 -92.3 -149.5 -122.3 -143.9 -159.1 -172.0 176.1 164.3 152.5 140.0 126.2 111.0 94.1 73.8 48.7 19.3 3.2 -13.9 -30.4 -45.7 -60.5 -73.3 -84.6 -95.9 -104.8 -114.4 -124.1 -132.7 -141.4 -150.8 -159.8 -167.9 -176.1 177.1 167.1 160.5 154.6 150.6 151.1 144.0 139.6 122.8 98.9 82.1 68.7 69.6 -11.2 -45.8 -63.0 -74.2 -84.3 -91.6 -99.6 -104.8
Download S-Parameters, click here
3
FMM5804X
17.5-31.5GHz Power Amplifier MMIC CHIP OUTLINE
0 VGG1 80 1410 1335 1140 1140 550 VGG2 1150 VGG3 1750 VGG4 2050 2530 Unit: m
RFin
RFout
0
75 80 240 VDD1 0 840 VDD2 2330 2470 VDD3 VDD4 Chip Size: 261030m x 141030m Chip Thickness:7020m Pad Dimensions: 1. DC 80 x 80m 2. RF 120 x 80m 2610
0
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE, LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0599M200
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